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Control of near-field radiative heat transfer via surface phonon-polariton coupling in thin films
(Springer Business+Media, 2011-06)
The possibility of controlling near-field radiative heat transfer with the use of silicon carbide thin films supporting surface phonon–polaritons in the infrared spectrum is explored. For this purpose, the local density ...
Thermal impacts on the performance of nanoscale-gap thermophotovoltaic power generators
(IEEE, 2011-06)
The thermal impacts on the performance of nanoscale-gap thermophotovoltaic (nano-TPV) power generators are investigated using a coupled near-field thermal radiation, charge, and heat transport formulation. A nano-TPV device ...
Polarization imaging of multiply-scattered radiation based on integral-vector Monte Carlo method
(Elsevier, 2010-01)
A new integral-vector Monte Carlo method (IVMCM) is developed to analyze the transfer of polarized radiation in 3D multiple scattering particle-laden media. The method is based on a “successive order of scattering series” ...
Spectral tuning of near-field radiative heat flux between two thin silicon carbide films
(Institute of Physics, 2010)
Spectral distributions of radiative heat flux between two thin silicon carbide films separated by sub-wavelength distances in vacuum are analysed. An analytical expression for the near-field flux between two layers of ...
Coexistence of multiple regimes for near-field thermal radiation between two layers supporting surface phonon polaritons in the infrared
(American Physical Society, 2011)
We demonstrate the coexistence of different near-field thermal radiation regimes between two layers supporting surface phonon polaritons (SPhPs) in the infrared. These regimes existwhen the distance of separation between ...
Local density of electromagnetic states within a nanometric gap formed between two thin films supporting surface phonon polaritons
(AIP Publishing, 2010)
We present a detailed physical analysis of the near-field thermal radiation spectrum emitted by a silicon carbide (SiC) film when another nonemitting SiC layer is brought in close proximity. This is accomplished via the ...
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