Publication: Metal oxide nano film characterization for CMP optimization
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Type
Conference paper
Access
info:eu-repo/semantics/restrictedAccess
Publication Status
published
Abstract
This paper focuses on the planarization of metallic films in microelectronics manufacturing by CMP through investigation of metal oxide thin films forming as a result of the chemical component of the process. Tungsten planarization is discussed as a model to establish the role of metal oxide nano-films in achieving material removal through their formation characteristics during polishing. The findings indicate a protective oxide film formation on tungsten, which tends to nucleate at high concentrations of oxidizers and enables material removal through the interaction of nano-particles in the slurry with the surface oxide hillocks.
Date
2013
Publisher
ECS
Description
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