Publication: Optik iletişim sistemlerinde standart CMOS fotodiyotların uygulaması
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Abstract
Bu bildiride standart CMOS üretim süreçleri ile gerçeklenmiş, mikroelektronik sistemlere düşük maliyetlerle tümleştirilebilecek fotodiyot yapılarının optik haberleşme sistemlerine uygulanabilirliği incelenmiştir. Silikon alttaş üzerine UMC 180 nm standart CMOS üretim ile gerçeklenmiş 1.05 mm × 1.00 mm alan kaplayan bir fotodiyot, farklı görünür dalga boylarında Power LED’lerin kaynak olarak kullanıldığı bir düzenekte optik alıcı olarak denenmiştir. CMOS fotodiyotun ba¸sarımı referans olarak kullanılan bir Thorlabs PDA10A-EC fotodiyotunki ile karşılaştırılmıştır. Deneylerde, referans fotodiyotun iletim bant genişliğinin 0.87 - 1.68 MHz aralığında olduğu ve CMOS fotodiyotunun 0.70 - 1.37 MHz gibi karşılaştırılabilir değerlerde bantlara erişebildiği görülmüştür. 200 kHz frekansta bir kare dalga işaret, CMOS fotodiyot kullanan bir optik iletişim sisteminde şeklinde kayda değer bir bozulma olmadan aktarılabilmektedir.
In this work, applicability to the optical communication systems of photodiodes realized with standard CMOS fabrication processes, which can be integrated to microelectronic systems at low costs. A photodiode fabricated with UMC 180 nm standard CMOS process on a silicon substrate within a 1.05 mm × 1.00 mm area is experimented with as an optical receiver in a setup where LEDs of different visible wavelengths are used as sources. Performance of the CMOS photodiode was compared to that of a Thorlabs PDA10A-EC photodiode used as a reference. In the experiments, it was observed that the communication bandwidth of the reference photodiode is in the 0.87-1.68 MHz range and that the CMOS photodiode can achieve comparable bandwidths in the range of 0.70-1.37 MHz. A square wave of 200 kHz frequency can be carried via an optical communication system using the CMOS photodiode without suffering from significant distortions.
In this work, applicability to the optical communication systems of photodiodes realized with standard CMOS fabrication processes, which can be integrated to microelectronic systems at low costs. A photodiode fabricated with UMC 180 nm standard CMOS process on a silicon substrate within a 1.05 mm × 1.00 mm area is experimented with as an optical receiver in a setup where LEDs of different visible wavelengths are used as sources. Performance of the CMOS photodiode was compared to that of a Thorlabs PDA10A-EC photodiode used as a reference. In the experiments, it was observed that the communication bandwidth of the reference photodiode is in the 0.87-1.68 MHz range and that the CMOS photodiode can achieve comparable bandwidths in the range of 0.70-1.37 MHz. A square wave of 200 kHz frequency can be carried via an optical communication system using the CMOS photodiode without suffering from significant distortions.
Date
2017
Publisher
IEEE
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