Browsing by Author "Siebert, M."

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    Chemical mechanical planarization studies on gallium nitride for improved performance
    (IEEE, 2015) Karagöz, Ayşe; Başım, Gül Bahar; Siebert, M.; Leunissen, L. A. H.; Mechanical Engineering; BAŞIM DOĞAN, Gül Bahar; Karagöz, Ayşe
    In this study, a systematic experimental approach has been followed to determine the conditions to promote material removal rate while controlling surface defectivity for GaN CMP. Silica based slurries were used to optimize the CMP conditions for a commercial GaN sample as a function of pH, and type of polishing pad and conditioning. In addition, CMP responses of Face A and Face B type crystallographic GaN surfaces were evaluated and compared to the 2" GaN wafer with unknown surface crystallographic structure. It is observed that the contact angle responses of the different crystallographic surfaces can help identify the type of GaN surface and support predicting the CMP performance simultaneously.
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    Surface characterization driven CMP optimization for gallium nitride
    (ECS, 2016) Karagöz, Ayşe; Siebert, M.; Leunissen, P.; Başım, Gül Bahar; Mechanical Engineering; BAŞIM DOĞAN, Gül Bahar; Karagöz, Ayşe
    Gallium nitride is a hard and chemically inert material demoting high material removal rates in the chemical mechanical planarization (CMP) applications. This paper focuses on the optimization of the process conditions to enhance material removal rates while controlling surface defectivity for GaN CMP. Two different crystallographic orientations of the GaN are characterized and compared to a commercial 2” GaN wafer to optimize the CMP performance on the basis of the wafer crystallographic nature, surface charge and topography. Slurry pH, the type of polishing pad and applied conditioning were evaluated to increase material removal rates of GaN while minimizing defect formation and enhancing the selectivity against silica.