Controlling germanium CMP selectivity through slurry mediation by surface active agents
dc.contributor.author | Karagöz, Ayşe | |
dc.contributor.author | Başım, Gül Bahar | |
dc.date.accessioned | 2015-10-28T06:48:37Z | |
dc.date.available | 2015-10-28T06:48:37Z | |
dc.date.issued | 2015-08-10 | |
dc.identifier.issn | 2162-8769 | |
dc.identifier.uri | http://hdl.handle.net/10679/989 | |
dc.identifier.uri | https://iopscience.iop.org/article/10.1149/2.0151511jss | |
dc.description | Due to copyright restrictions, the access to the full text of this article is only available via subscription. | |
dc.description.abstract | New developments and device performance requirements in microelectronics industry add to the challenges in chemical mechanical planarization (CMP) process. One of the recently introduced materials to semiconductor manufacturing is germanium which enables improved device performance through better channel mobility in shallow trench isolation (STI) applications for advanced circuits. This paper focuses on controlling germanium/silica selectivity for advanced STI CMP applications through slurry modification by surface active agents. Surface adsorption characteristics of cationic and anionic surfactants on germanium and silica wafers are analyzed in order to control selectivity as well as the defectivity performance of the CMP applications. The effects of surfactant charge and concentration (up to self-assembly) are studied in terms of slurry stability, material removal rates and surface defectivity. Surface charge manipulation by the surfactant adsorption on the germanium surface is presented as the main criteria on the selection of the proper surfactant/oxidizer systems for CMP. The outlined correlations are systematically presented to highlight slurry modification criteria for the desired selectivity results. Consequently, the paper evaluates the slurry selectivity control and improvement criteria for the new materials introduced to microelectronics applications with CMP requirement by evaluating the germanium silica system as a model application. | en_US |
dc.description.sponsorship | European Commission | |
dc.language.iso | eng | en_US |
dc.publisher | The Electrochemical Society | en_US |
dc.relation | info:eu-repo/grantAgreement/EC/FP7/256348 | en_US |
dc.relation.ispartof | ECS Journal of Solid State Science and Technology, CMP Special Issue | |
dc.rights | openAccess | |
dc.title | Controlling germanium CMP selectivity through slurry mediation by surface active agents | en_US |
dc.type | Article | en_US |
dc.peerreviewed | yes | en_US |
dc.publicationstatus | published | en_US |
dc.contributor.department | Özyeğin University | |
dc.contributor.authorID | (ORCID 0000-0002-2049-4410 & YÖK ID 124618) Başım, Bahar | |
dc.contributor.ozuauthor | Başım, Gül Bahar | |
dc.identifier.volume | 4 | |
dc.identifier.issue | 11 | |
dc.identifier.startpage | P5097 | |
dc.identifier.endpage | P5104 | |
dc.identifier.wos | WOS:000358992400015 | |
dc.identifier.doi | 10.1149/2.0151511jss | |
dc.subject.keywords | Chemical mechanical planarization | |
dc.subject.keywords | Germanium/silica selectivity | |
dc.subject.keywords | Shallow trench isolation | |
dc.subject.keywords | Surface active agents | |
dc.identifier.scopus | SCOPUS:2-s2.0-84945208739 | |
dc.contributor.ozugradstudent | Karagöz, Ayşe | |
dc.contributor.authorFemale | 2 | |
dc.relation.publicationcategory | Article - International Refereed Journal - Institution Academic Staff and Graduate Student |
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