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A modeling study on the layout impact of with-in-die thickness range for STI CMP
(ECS, 2013)
Chemical Mechanical Planarization process has a proven track record as an effective method for planarizing the wafer surface at multiple points of the semiconductor manufacturing flow. One of the most challenging aspects ...
Impact of pad conditioning on thickness profile control in chemical mechanical planarization
(Springer Science+Business Media, 2013-01)
Chemical mechanical planarization (CMP) has been proven to be the best method to achieve within-wafer and within-die uniformity for multilevel metallization. Decreasing device dimensions and increasing wafer sizes continuously ...
Studies on slurry design fundamentals for advanced CMP applications
(ECS, 2013)
New developments and device performance requirements in microelectronics industry add to the challenges in chemical mechanical planarization (CMP) process. One of the recently introduced materials is germanium which enables ...
Surfactant mediated slurry formulations for Ge CMP applications
(Cambridge University Press, 2013)
In this study, slurry formulations in the presence of self-assembled surfactant structures were investigated for Ge/SiO2 CMP applications in the absence and presence of oxidizers. Both anionic (sodium dodecyl sulfate-SDS) ...
Metal oxide nano film characterization for CMP optimization
(ECS, 2013)
This paper focuses on the planarization of metallic films in microelectronics manufacturing by CMP through investigation of metal oxide thin films forming as a result of the chemical component of the process. Tungsten ...
Characterization of chemically modified thin films for optimization of metal CMP applications?
(Cambridge University Press, 2013)
Metal CMP applications necessitate the formation of a protective oxide film in the presence of surface active agents, oxidizers, pH regulators and other chemicals to achieve global planarization. Formation and mechanical ...
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