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A Cahn-Hilliard modeling of metal oxide thin films for advanced CMP applications
(ECS, 2014)
Chemical mechanical planarization (CMP) process enables topographic selectivity through formation of a protective oxide thin film on the recessed locations of the deposited metal layer, while a continuous chemical oxidation ...
A modeling study on the layout impact of with-in-die thickness range for STI CMP
(ECS, 2013)
Chemical Mechanical Planarization process has a proven track record as an effective method for planarizing the wafer surface at multiple points of the semiconductor manufacturing flow. One of the most challenging aspects ...
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