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dc.contributor.authorBaşım, Gül Bahar
dc.date.accessioned2016-02-17T06:33:28Z
dc.date.available2016-02-17T06:33:28Z
dc.date.issued2009
dc.identifier.isbn978-1-60768-094-9
dc.identifier.urihttp://hdl.handle.net/10679/2804
dc.identifier.urihttp://ecst.ecsdl.org/content/25/7/315.abstract
dc.descriptionDue to copyright restrictions, the access to the full text of this article is only available via subscription.
dc.description.abstractThe conventional demands for development in semiconductor industry are changing as the Moore's Law is approaching to its limits. This paper demonstrates a theoretical optimization approach for the planarization of metal films by Chemical Mechanical Polishing (CMP) process. Optimal removal rate and a smooth surface finish post CMP can be achieved by the combined effect of the chemical and mechanical components of the process. Metal CMP necessitates a protective oxide film formation in the presence of surface active agents, corrosives, pH regulators etc' to achieve global planarization. Formation and mechanical properties of the chemically modified films determine the stresses develop in the film structure delineating the stability of the chemically altered films on the surface of the metal wafer. The balance between the stresses built in the film structure versus the mechanical actions provided during the process can be used to optimize the process variables and furthermore help define new planarization techniques for the next generation microelectronic device manufacturing which is expected to deal with atomic level structures.
dc.language.isoengen_US
dc.publisherThe Electrochemical Society
dc.relation.ispartofUlsi Process Integration 6
dc.rightsrestrictedAccess
dc.titleMetal CMP optimization based on chemically formed thin film analysisen_US
dc.typeConference paperen_US
dc.peerreviewedyes
dc.publicationstatuspublisheden_US
dc.contributor.departmentÖzyeğin University
dc.contributor.authorID(ORCID 0000-0002-2049-4410 & YÖK ID 124618) Başım, Bahar
dc.contributor.ozuauthorBaşım, Gül Bahar
dc.identifier.volume25
dc.identifier.issue7
dc.identifier.startpage315
dc.identifier.endpage326
dc.identifier.wosWOS:000338102400030
dc.identifier.doi10.1149/1.3203969
dc.subject.keywordsCopper
dc.subject.keywordsSurfaces
dc.subject.keywordsSilica
dc.subject.keywordsLayer
dc.identifier.scopusSCOPUS:2-s2.0-74349106178
dc.contributor.authorFemale1
dc.relation.publicationcategoryConference Paper - International - Institutional Academic Staff


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