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dc.contributor.authorArık, Mehmet
dc.contributor.authorKulkarni, K. S.
dc.contributor.authorRoyce, C.
dc.contributor.authorWeaver, S.
dc.date.accessioned2016-02-17T06:33:24Z
dc.date.available2016-02-17T06:33:24Z
dc.date.issued2014
dc.identifier.issn1087-9870
dc.identifier.urihttp://hdl.handle.net/10679/2763
dc.identifier.urihttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?reload=true&arnumber=6892277
dc.descriptionDue to copyright restrictions, the access to the full text of this article is only available via subscription.
dc.description.abstractWhite light emitting diodes (LEDs) are appearing in general illumination applications. Clusters of such LEDs can replace an incandescent light bulb of equal luminosity on the merit of considerably low power consumption. However the optical performance and working life of these LED packages are strongly dependent on the temperature of the p-n junction of the LED. Hence it is very critical to determine the temperature of the junction. Three methods - forward voltage change, peak wavelength shift and infrared thermal imaging are employed to determine the junction temperature. Forward voltage change method is found to be the most accurate method (± 3 °C) for an optimized set of parameters. Analytical model is proposed for the thermal transient behavior of the LED junction and the predictions are compared with experimental results. A good agreement is observed between that of two experimental methods. Thermal resistance of the LED package is estimated analytically and experimentally. Experimental values show a larger variation than expected through material property variation.
dc.language.isoengen_US
dc.rightsrestrictedAccess
dc.titleDeveloping a standard measurement and calculation procedure for high brightness LED junction temperatureen_US
dc.typeConference paperen_US
dc.peerreviewedyes
dc.publicationstatuspublished
dc.contributor.departmentÖzyeğin University
dc.contributor.authorID(ORCID 0000-0002-9505-281X & YÖK ID 124782) Arık, Mehmet
dc.contributor.ozuauthorArık, Mehmet
dc.identifier.startpage170
dc.identifier.endpage177
dc.identifier.wosWOS:000366567000021
dc.identifier.doi10.1109/ITHERM.2014.6892277
dc.subject.keywordsLED junction temperature
dc.subject.keywordsForward voltage
dc.subject.keywordsWavelength shift
dc.subject.keywordsThermal transient behavior
dc.identifier.scopusSCOPUS:2-s2.0-84907692934
dc.contributor.authorMale1
dc.relation.publicationcategoryConference Paper - International - Institutional Academic Staff


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