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A Cahn-Hilliard modeling of metal oxide thin films for advanced CMP applications
(ECS, 2014)
Chemical mechanical planarization (CMP) process enables topographic selectivity through formation of a protective oxide thin film on the recessed locations of the deposited metal layer, while a continuous chemical oxidation ...
A modeling study on the layout impact of with-in-die thickness range for STI CMP
(ECS, 2013)
Chemical Mechanical Planarization process has a proven track record as an effective method for planarizing the wafer surface at multiple points of the semiconductor manufacturing flow. One of the most challenging aspects ...
Tailoring silica nanotribology for CMP slurry optimization: Ca2+ cation competition in C12TAB mediated lubrication
(ACS, 2010-04-12)
Self-assembled surfactant structures at the solid/liquid interface have been shown to act as nanoparticulate dispersants and are capable of providing a highly effective, self-healing boundary lubrication layer in aqueous ...
Impact of pad conditioning on thickness profile control in chemical mechanical planarization
(Springer Science+Business Media, 2013-01)
Chemical mechanical planarization (CMP) has been proven to be the best method to achieve within-wafer and within-die uniformity for multilevel metallization. Decreasing device dimensions and increasing wafer sizes continuously ...
Studies on slurry design fundamentals for advanced CMP applications
(ECS, 2013)
New developments and device performance requirements in microelectronics industry add to the challenges in chemical mechanical planarization (CMP) process. One of the recently introduced materials is germanium which enables ...
Metal CMP optimization based on chemically formed thin film analysis
(The Electrochemical Society, 2009)
The conventional demands for development in semiconductor industry are changing as the Moore's Law is approaching to its limits. This paper demonstrates a theoretical optimization approach for the planarization of metal ...
Improving selectivity on germanium CMP applications
(ECS, 2014)
In the presented paper, the adsorption characteristics of cationic and anionic surfactants on germanium and silica were studied in order to improve selectivity in germanium based shallow trench isolation chemical mechanical ...
Metal oxide nano film characterization for CMP optimization
(ECS, 2013)
This paper focuses on the planarization of metallic films in microelectronics manufacturing by CMP through investigation of metal oxide thin films forming as a result of the chemical component of the process. Tungsten ...
Controlling germanium CMP selectivity through slurry mediation by surface active agents
(The Electrochemical Society, 2015-08-10)
New developments and device performance requirements in microelectronics industry add to the challenges in chemical mechanical planarization (CMP) process. One of the recently introduced materials to semiconductor manufacturing ...
Effect of slurry aging on stability and performance of chemical mechanical planarization process
(Elsevier, 2011-03)
Chemical mechanical planarization (CMP) is known to be one of the most challenging processes in microelectronics manufacturing due to the number of variables involved in the design of the process. In particular, the slurries ...
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