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Surface characterization driven CMP optimization for gallium nitride
(ECS, 2016)
Gallium nitride is a hard and chemically inert material demoting high material removal rates in the chemical mechanical planarization (CMP) applications. This paper focuses on the optimization of the process conditions to ...
Chemical mechanical planarization studies on gallium nitride for improved performance
(IEEE, 2015)
In this study, a systematic experimental approach has been followed to determine the conditions to promote material removal rate while controlling surface defectivity for GaN CMP. Silica based slurries were used to optimize ...
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