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Surface characterization driven CMP optimization for gallium nitride
(ECS, 2016)
Gallium nitride is a hard and chemically inert material demoting high material removal rates in the chemical mechanical planarization (CMP) applications. This paper focuses on the optimization of the process conditions to ...
Chemical mechanical planarization studies on gallium nitride for improved performance
(IEEE, 2015)
In this study, a systematic experimental approach has been followed to determine the conditions to promote material removal rate while controlling surface defectivity for GaN CMP. Silica based slurries were used to optimize ...
Evaluation of chemical mechanical polishing-based surface modification on 3D dental implants compared to alternative methods
(MDPI AG, 2018-11-15)
Chemical mechanical polishing (CMP) has been introduced in previous studies as a synergistic technique to modify the surface chemistry and topography of titanium-based implants to control their biocompatibility. In this ...
Application of chemical mechanical polishing process on titanium based implants
(Elsevier, 2016-11-01)
Modification of the implantable biomaterial surfaces is known to improve the biocompatibility of metallic implants. Particularly, treatments such as etching, sand-blasting or laser treatment are commonly studied to understand ...
Metal oxide thin film characterization for new generation chemical mechanical planarization development
(The Electrochemical Society, 2016)
This study targets to create a basis for the process development in the new generation semiconductor industry dealing with atomic scale devices. We focus on the CMP process development as it is used for the current and ...
A coupled material removal model for chemical mechanical polishing processes
(IOP Publishing, 2021-10-01)
Chemical mechanical polishing (CMP) is a process used to obtain planarized surfaces in microelectronic device manufacturing. The planarization is achieved by material removal from the wafer surface by synergistic effect ...
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