Ozbek, S.Akbar, WazirBaşım, Gül Bahar2018-02-232018-02-232017-10-042162-8769http://hdl.handle.net/10679/5782https://doi.org/10.1149/2.0201711jssIn this paper, we present a systematic approach to the gallium nitride (GaN) chemical mechanical planarization (CMP) process through evaluating the effect of crystallographic orientation, slurry chemistry and process variables on the removal rate and surface quality responses. A new CMP process and a complementary tool set-up are introduced to enhance GaN material removal rates. The key process variables are studied to set them at an optimal level, while a new slurry feed methodology is introduced in addition to a new tool set up to enable high material removal rates and acceptable surface quality through close control of the process chemistry. It is shown that the optimized settings can significantly improve the material removal rates as compared to the literature findings while simultaneously enabling a more sustainable process and potential removal selectivity against silica.engrestrictedAccessarticle611S3084S309200041836950002010.1149/2.0201711jssCMPGaNOptimization