Francoeur, M.Mengüç, Mustafa PınarVaillon, R.2012-08-232012-08-232011-061432-0630http://hdl.handle.net/10679/245https://doi.org/10.1007/s00339-010-6184-0Due to copyright restrictions, the access to the full text of this article is only available via subscription.The possibility of controlling near-field radiative heat transfer with the use of silicon carbide thin films supporting surface phonon–polaritons in the infrared spectrum is explored. For this purpose, the local density of electromagnetic states is calculated and analyzed within the nanometric gap formed between two SiC films as well as the radiative heat flux exchanged between the thin layers.enginfo:eu-repo/semantics/restrictedAccessArticle103354755000029116170000710.1007/s00339-010-6184-0Near-field radiative heat transfer2-s2.0-79959328776