Varonen, M.Reeves, R.Kangaslahti, P.Samoska, L.Kooi, J. W.Cleary, K.Gawande, R. S.Akgiray, Ahmed HalidFung, A.Gaier, T.Weinreb, S.Readhead, A. C. S.Lawrence, C.Sarkozy, S.Lai, R.2016-09-012016-09-012016-031557-9670http://hdl.handle.net/10679/4445https://doi.org/10.1109/TMTT.2016.2521650Due to copyright restrictions, the access to the full text of this article is only available via subscription.In this paper we discuss the design of low-noise amplifiers (LNAs) for both cryogenic and room-temperature operation in general and take the stability and linearity of the amplifiers into special consideration. Oscillations that can occur within a multi-finger transistor are studied and verified with simulations and measurements. To overcome the stability problem related to the multi-finger transistor design approach a parallel two-finger unit transistor monolithic microwave integrated circuit LNA design technique, which enables the design of wideband and high-linearity LNAs with very stable, predictable, and repeatable operation, is proposed. The feasibility of the proposed design technique is proved by demonstrating a three-stage LNA packaged in a WR10 waveguide housing and fabricated using a 35-nm InP HEMT technology that achieves more than a 20-dB gain from 75 to 116 GHz and 26-33-K noise temperature from 85 to 116 GHz when cryogenically cooled to 27 K.engrestrictedAccessarticle64382683500037248860001610.1109/TMTT.2016.2521650CryogenicInP HEMTLow-noise amplifiers (LNAs)Monolithic microwave integrated circuit (MMIC)2-s2.0-84969335409