Başım, Gül BaharKaragöz, Ayşe2017-07-252017-07-2520161938-5862http://hdl.handle.net/10679/5467https://doi.org/10.1149/07203.0067ecstThis study targets to create a basis for the process development in the new generation semiconductor industry dealing with atomic scale devices. We focus on the CMP process development as it is used for the current and future semiconductor materials in microelectronics industry for metallic, semiconductor and dielectric materials. Particularly, formation and atomic level removal mechanisms of the CMP induced metal oxide thin films for metallic layers and chemically modified hydrated layer interaction for the semiconductor films are presented as a focus for the new generation device manufacturing.engrestrictedAccessarticle10.1149/07203.0067ecstCharacterizationChemical mechanical polishingDielectric materialsMetallic compoundsMetalsMicroelectronicsOxide filmsSemiconductor device manufactureSemiconductor devicesSemiconductor materials2-s2.0-85010896009