Başım, Gül BaharKaragöz, AyşeÖzdemir, Zeynep2016-02-172016-02-172013978-1-60768-427-5http://hdl.handle.net/10679/2805https://doi.org/10.1149/05039.0003ecstDue to copyright restrictions, the access to the full text of this article is only available via subscription.This paper focuses on the planarization of metallic films in microelectronics manufacturing by CMP through investigation of metal oxide thin films forming as a result of the chemical component of the process. Tungsten planarization is discussed as a model to establish the role of metal oxide nano-films in achieving material removal through their formation characteristics during polishing. The findings indicate a protective oxide film formation on tungsten, which tends to nucleate at high concentrations of oxidizers and enables material removal through the interaction of nano-particles in the slurry with the surface oxide hillocks.engrestrictedAccessconferenceObject50393700033831310000110.1149/05039.0003ecst2-s2.0-84885792534