Khosroshahi, F. K.Ertürk, H.Mengüç, Mustafa Pınar2017-07-252017-07-252017-080022-4073http://hdl.handle.net/10679/5471https://doi.org/10.1016/j.jqsrt.2017.01.030Design of a spectrally selective filter based on one-dimensional Si/SiO2 layers is considered for improved performance of thermo-photovoltaic devices. Spectrally selective filters transmit only the convertible radiation from the emitter as non-convertible radiation leads to a reduction in cell efficiency due to heating. The presented Si/SiO2 based filter concept reflects the major part of the undesired range back to the emitter to minimize energy required for the process and it is adaptable to different types of cells and emitters with different temperatures since its cut-off wavelength can be tuned. While this study mainly focuses on InGaSb based thermo-photovoltaic cell, Si, GaSb, and Ga0.78In0.22As0.19Sb0.81 based cells are also examined. Transmittance of the structure is predicted by rigorous coupled wave approach. Genetic algorithm, which is a global optimization method, is used to find the best possible filter structure by considering the overall efficiency as an objective function that is maximized. The simulations show that significant enhancement in the overall system and device efficiency is possible by using such filters with TPV devices. The methodology described in this paper allows for an improved filter design procedure for selected applications.enginfo:eu-repo/semantics/restrictedAccessOptimization of spectrally selective Si/SiO2 based filters for thermophotovoltaic devicesArticle19712313100040430350001410.1016/j.jqsrt.2017.01.030ThermophotovoltaicSpectrally selectiveOptical tuningFiltersSi/SiO2Genetic algorithm2-s2.0-85012273697