Metal oxide thin film characterization for new generation chemical mechanical planarization development
Type :
Article
Publication Status :
published
Access :
restrictedAccess
Abstract
This study targets to create a basis for the process development in the new generation semiconductor industry dealing with atomic scale devices. We focus on the CMP process development as it is used for the current and future semiconductor materials in microelectronics industry for metallic, semiconductor and dielectric materials. Particularly, formation and atomic level removal mechanisms of the CMP induced metal oxide thin films for metallic layers and chemically modified hydrated layer interaction for the semiconductor films are presented as a focus for the new generation device manufacturing.
Source :
ECS Transactions
Date :
2016
Publisher :
The Electrochemical Society
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