Browsing by Author "Wong, B. T."
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ArticlePublication Metadata only Coupling of near-field thermal radiative heating and phonon Monte Carlo simulation: Assessment of temperature gradient in n-doped silicon thin film(Elsevier, 2014-08) Wong, B. T.; Francoeur, M.; Bong, V. N.-S.; Mengüç, Mustafa Pınar; Mechanical Engineering; MENGÜÇ, Mustafa PınarNear-field thermal radiative exchange between two objects is typically more effective than the far-field thermal radiative exchange as the heat flux can increase up to several orders higher in magnitudes due to tunneling of evanescent waves. Such an interesting phenomenon has started to gain its popularity in nanotechnology, especially in nano-gap thermophotovoltaic systems and near-field radiative cooling of micro-/nano-devices. Here, we explored the existence of thermal gradient within an n-doped silicon thin film when it is subjected to intensive near-field thermal radiative heating. The near-field radiative power density deposited within the film is calculated using the Maxwell equations combined with fluctuational electrodynamics. A phonon Monte Carlo simulation is then used to assess the temperature gradient by treating the near-field radiative power density as the heat source. Results indicated that it is improbable to have temperature gradient with the near-field radiative heating as a continuous source unless the source comprises of ultra-short radiative pulses with a strong power density.ArticlePublication Open Access A Monte Carlo simulation for phonon transport within silicon structures at nanoscales with heat generation(Elsevier, 2011-04) Wong, B. T.; Francoeur, M.; Mengüç, Mustafa Pınar; Mechanical Engineering; MENGÜÇ, Mustafa PınarNanoscale phonon transport within silicon structures subjected to internal heat generation was explored. A Monte Carlo simulation was used. The simulation procedures differed from the current existing methods in which phonons below a predefined “reference temperature” were not accounted to reduce memory storage and computational resources. Results indicated that the heat diffusion equation significantly underestimates temperature distribution at nanoscales in the presence of an external heat source. Discussions on temperature distribution inside silicon thin film when heated by a pulsed laser, an electron beam or due to near-field thermal radiation effects were also provided.ArticlePublication Metadata only A unified Monte Carlo treatment of the transport of electromagnetic energy, electrons, and phonons in absorbing and scattering media(Elsevier, 2010-02) Wong, B. T.; Mengüç, Mustafa Pınar; Mechanical Engineering; MENGÜÇ, Mustafa PınarThe scalar Boltzmann transport equation (BTE) is often applicable to radiative energy transfer, electron–beam propagation, as well as thermal conduction by electrons and phonons provided that the characteristic length of the system is much larger than the wavelength of energy carriers and that certain interference phenomena and the polarization nature of carriers are ignored. It is generally difficult to solve the BTE analytically unless a series of assumptions are introduced for the particle distribution function and scattering terms. Yet, the BTE can be solved using statistical approaches such as Monte Carlo (MC) methods without simplifying the underlying physics significantly. Derivations of the MC methods are relatively straightforward and their implementation can be achieved with little effort; they are also quite powerful in accounting for complicated physical situations and geometries. MC simulations in radiative transfer, electron–beam propagation, and thermal conduction by electrons and phonons have similar simulation procedures; however, there are important differences in implementing the algorithms and scattering properties between these simulations. The objective of this review article is to present these simulation procedures in detail and to show that it is possible to adapt an existing MC computer code, for instance, in radiative transfer, to account for physics in electron–beam transport or phonon (or electronic thermal) conduction by sorting out the differences and implementing the correct corresponding steps. Several simulation results are presented and some of the difficulties associated with different applications are explained.