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dc.contributor.authorKincal, S.
dc.contributor.authorBaşım, Gül Bahar
dc.date.accessioned2014-07-10T07:16:56Z
dc.date.available2014-07-10T07:16:56Z
dc.date.issued2013-01
dc.identifier.issn1543-186X
dc.identifier.urihttp://hdl.handle.net/10679/475
dc.identifier.urihttp://link.springer.com/article/10.1007%2Fs11664-012-2250-z
dc.descriptionDue to copyright restrictions, the access to the full text of this article is only available via subscription.en_US
dc.description.abstractChemical mechanical planarization (CMP) has been proven to be the best method to achieve within-wafer and within-die uniformity for multilevel metallization. Decreasing device dimensions and increasing wafer sizes continuously demand better planarization, which necessitates better understanding of all the variables of the CMP process. A recently highlighted critical factor, pad conditioning, affects the pad surface profile and consequently the wafer profile; in addition, it reduces defects by refreshing the pad surface during polishing. This work demonstrates the changes in the postpolish wafer profile as a function of pad wear. It also introduces a wafer material removal rate profile model based on the locally relevant Preston equation by estimating the pad thickness profile as a function of polishing time. The result is a dynamic predictor of how the wafer removal rate profile shifts as the pad ages. The model helps fine-tune the pad conditioner operating characteristics without the requirement for costly and lengthy experiments. The accuracy of the model is demonstrated by experiments as well as data from a real production line. Both experimental data and simulations indicate that the smaller conditioning disk size and extended conditioning sweep range help improve the post-CMP wafer planarization. However, the defectivity tends to increase when the conditioning disk sweeps out of the pad radius; hence, the pad conditioning needs to be designed by considering the specific requirements of the CMP process conducted. The presented model predicts the process outcomes without requiring detailed experimentation.en_US
dc.description.sponsorshipthe Texas Instruments Incorporated DM5 Wafer Fab and Analog Technology Development
dc.language.isoengen_US
dc.publisherSpringer Science+Business Mediaen_US
dc.relation.ispartofJournal of Electronic Materials
dc.rightsrestrictedAccess
dc.titleImpact of pad conditioning on thickness profile control in chemical mechanical planarizationen_US
dc.typeArticleen_US
dc.peerreviewedyesen_US
dc.publicationstatuspublisheden_US
dc.contributor.departmentÖzyeğin University
dc.contributor.authorID124618
dc.contributor.ozuauthorBaşım, Gül Bahar
dc.identifier.volume42
dc.identifier.issue1
dc.identifier.startpage83
dc.identifier.endpage96
dc.identifier.wosWOS:000312660100012
dc.identifier.doi10.1007/s11664-012-2250-z
dc.subject.keywordsChemical mechanical planarization (CMP)en_US
dc.subject.keywordsConditioningen_US
dc.subject.keywordsPad profile modelingen_US
dc.subject.keywordsDefectivityen_US
dc.identifier.scopusSCOPUS:2-s2.0-84871815764
dc.contributor.authorFemale1


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