Chemical Mechanical Planarization process has a proven track record as an effective method for planarizing the wafer surface at multiple points of the semiconductor manufacturing flow. One of the most challenging aspects ...

Chemical mechanical planarization (CMP) has been proven to be the best method to achieve within-wafer and within-die uniformity for multilevel metallization. Decreasing device dimensions and increasing wafer sizes continuously ...

Metal CMP applications necessitate the formation of a protective oxide film in the presence of surface active agents, oxidizers, pH regulators and other chemicals to achieve global planarization. Formation and mechanical ...

New developments and device performance requirements in microelectronics industry add to the challenges in chemical mechanical planarization (CMP) process. One of the recently introduced materials is germanium which enables ...

In this study, slurry formulations in the presence of self-assembled surfactant structures were investigated for Ge/SiO2 CMP applications in the absence and presence of oxidizers. Both anionic (sodium dodecyl sulfate-SDS) ...

This paper focuses on the planarization of metallic films in microelectronics manufacturing by CMP through investigation of metal oxide thin films forming as a result of the chemical component of the process. Tungsten ...