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dc.contributor.authorBaşım, Gül Bahar
dc.contributor.authorKaragöz, Ayşe
dc.contributor.authorÖzdemir, Zeynep
dc.date.accessioned2016-02-17T06:33:26Z
dc.date.available2016-02-17T06:33:26Z
dc.date.issued2012-01
dc.identifier.urihttp://hdl.handle.net/10679/2785
dc.identifier.urihttp://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8652351&fileId=S1946427412013619
dc.descriptionDue to copyright restrictions, the access to the full text of this article is only available via subscription.
dc.description.abstractChemical Mechanical Planarization (CMP) is widely used to ensure planarity of metal and dielectric surfaces to enable photolithography and hence multilevel metallization in microelectronics manufacturing. The aim of this study is to establish a fundamental understanding on the dynamic growth of nano-scale protective oxide thin films during CMP to enable the selection of proper oxidizer concentrations for slurry formulations. Tungsten was selected as the model metal film to study the formation of these metal oxide films in various oxidizers and Atomic Force Microscope (AFM) was used to measure the surface roughness of the samples conditioned in the oxidizer environment before and after the CMP was conducted. The affect of surface roughness on wettability of the surfaces were also studied through contact angle measurements on the treated tungsten films. Fourier Transform Infrared Spectroscopy with Attenuated Total Reflectance FTIR/ATR technique in combination with the X-Ray Reflectivity (XRR) were utilized to determine the thicknesses of the oxidized nano films on the tungsten surface. The results were evaluated through the material removal responses reported in the literature for the W-CMP in addition to the comparison of the Pilling-Bedworth ratios of the oxidized nano films to determine the ability of the created oxide film as a self-protective oxide.
dc.language.isoengen_US
dc.publisherCambridge University Press
dc.relation.ispartofMRS Proceedings
dc.rightsrestrictedAccess
dc.titleAdvanced slurry formulations for new generation chemical mechanical planarization (CMP) applicationsen_US
dc.typeConference paperen_US
dc.peerreviewedyes
dc.publicationstatuspublisheden_US
dc.contributor.departmentÖzyeğin University
dc.contributor.authorID(ORCID 0000-0002-2049-4410 & YÖK ID 124618) Başım, Bahar
dc.contributor.ozuauthorBaşım, Gül Bahar
dc.identifier.volume1428
dc.identifier.doi10.1557/opl.2012.1361
dc.subject.keywordsCMP
dc.subject.keywordsThin film
dc.identifier.scopusSCOPUS:2-s2.0-84879276246
dc.contributor.ozugradstudentKaragöz, Ayşe
dc.contributor.ozugradstudentÖzdemir, Zeynep
dc.contributor.authorFemale3
dc.relation.publicationcategoryConference Paper - International - Institutional Academic Staff and PhD Student


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