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dc.contributor.authorWong, B. T.
dc.contributor.authorFrancoeur, M.
dc.contributor.authorBong, V. N.-S.
dc.contributor.authorMengüç, Mustafa Pınar
dc.date.accessioned2014-12-17T06:46:40Z
dc.date.available2014-12-17T06:46:40Z
dc.date.issued2014-08
dc.identifier.issn0022-4073
dc.identifier.urihttp://hdl.handle.net/10679/728
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S0022407313003579
dc.descriptionDue to copyright restrictions, the access to the full text of this article is only available via subscription.en_US
dc.description.abstractNear-field thermal radiative exchange between two objects is typically more effective than the far-field thermal radiative exchange as the heat flux can increase up to several orders higher in magnitudes due to tunneling of evanescent waves. Such an interesting phenomenon has started to gain its popularity in nanotechnology, especially in nano-gap thermophotovoltaic systems and near-field radiative cooling of micro-/nano-devices. Here, we explored the existence of thermal gradient within an n-doped silicon thin film when it is subjected to intensive near-field thermal radiative heating. The near-field radiative power density deposited within the film is calculated using the Maxwell equations combined with fluctuational electrodynamics. A phonon Monte Carlo simulation is then used to assess the temperature gradient by treating the near-field radiative power density as the heat source. Results indicated that it is improbable to have temperature gradient with the near-field radiative heating as a continuous source unless the source comprises of ultra-short radiative pulses with a strong power density.en_US
dc.description.sponsorshipEuropean Commission
dc.description.sponsorshipthe Ministry of Higher Education in Malaysia ; European Commission
dc.language.isoengen_US
dc.publisherElsevieren_US
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/239382en_US
dc.relation.ispartofJournal of Quantitative Spectroscopy and Radiative Transfer
dc.rightsrestrictedAccess
dc.titleCoupling of near-field thermal radiative heating and phonon Monte Carlo simulation: Assessment of temperature gradient in n-doped silicon thin filmen_US
dc.typeArticleen_US
dc.peerreviewedyesen_US
dc.publicationstatuspublisheden_US
dc.contributor.departmentÖzyeğin University
dc.contributor.authorID(ORCID 0000-0001-5483-587X & YÖK ID 141825) Mengüç, Pınar
dc.contributor.ozuauthorMengüç, Mustafa Pınar
dc.identifier.volume143
dc.identifier.startpage46
dc.identifier.endpage55
dc.identifier.wosWOS:000337212800006
dc.identifier.doi10.1016/j.jqsrt.2013.09.002
dc.subject.keywordsNear-field thermal radiationen_US
dc.subject.keywordsNear-field radiative heatingen_US
dc.subject.keywordsMonte Carlo phonon transporten_US
dc.subject.keywordsThermal gradient in thin filmen_US
dc.subject.keywordsNear-field radiation and phonon transport couplingen_US
dc.identifier.scopusSCOPUS:2-s2.0-84896046821
dc.contributor.authorMale1


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