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dc.contributor.authorBaşım, Gül Bahar
dc.contributor.authorKaragöz, Ayşe
dc.contributor.authorÖzdemir, Zeynep
dc.date.accessioned2016-02-17T06:33:28Z
dc.date.available2016-02-17T06:33:28Z
dc.date.issued2013
dc.identifier.isbn978-1-60768-427-5
dc.identifier.urihttp://hdl.handle.net/10679/2805
dc.identifier.urihttp://ecst.ecsdl.org/content/50/39/3.abstract
dc.descriptionDue to copyright restrictions, the access to the full text of this article is only available via subscription.
dc.description.abstractThis paper focuses on the planarization of metallic films in microelectronics manufacturing by CMP through investigation of metal oxide thin films forming as a result of the chemical component of the process. Tungsten planarization is discussed as a model to establish the role of metal oxide nano-films in achieving material removal through their formation characteristics during polishing. The findings indicate a protective oxide film formation on tungsten, which tends to nucleate at high concentrations of oxidizers and enables material removal through the interaction of nano-particles in the slurry with the surface oxide hillocks.
dc.language.isoengen_US
dc.publisherECS
dc.relation.ispartofECS Transactions - Chemical Mechanical Polishing 12
dc.rightsrestrictedAccess
dc.titleMetal oxide nano film characterization for CMP optimizationen_US
dc.typeConference paperen_US
dc.peerreviewedyes
dc.publicationstatuspublisheden_US
dc.contributor.departmentÖzyeğin University
dc.contributor.authorID124618
dc.contributor.ozuauthorBaşım, Gül Bahar
dc.identifier.volume50
dc.identifier.issue39
dc.identifier.startpage3
dc.identifier.endpage7
dc.identifier.wosWOS:000338313100001
dc.identifier.doi10.1149/05039.0003ecst
dc.identifier.scopusSCOPUS:2-s2.0-84885792534
dc.contributor.ozugradstudentKaragöz, Ayşe
dc.contributor.ozugradstudentÖzdemir, Zeynep
dc.contributor.authorFemale3


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