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dc.contributor.authorFrancoeur, M.
dc.contributor.authorMengüç, Mustafa Pınar
dc.contributor.authorVaillon, R.
dc.date.accessioned2012-08-23T13:29:06Z
dc.date.available2012-08-23T13:29:06Z
dc.date.issued2011-06
dc.identifier.issn1432-0630
dc.identifier.urihttp://hdl.handle.net/10679/245
dc.identifier.urihttp://www.springerlink.com/content/t050g0h1537703r0/
dc.descriptionDue to copyright restrictions, the access to the full text of this article is only available via subscription.
dc.description.abstractThe possibility of controlling near-field radiative heat transfer with the use of silicon carbide thin films supporting surface phonon–polaritons in the infrared spectrum is explored. For this purpose, the local density of electromagnetic states is calculated and analyzed within the nanometric gap formed between two SiC films as well as the radiative heat flux exchanged between the thin layers.en_US
dc.description.sponsorshipUS Department of Energy ; Kentucky Science and Engineering Foundation ; European Commission ; TÜBİTAK
dc.language.isoengen_US
dc.publisherSpringer Business+Mediaen_US
dc.relation.ispartofApplied Physics A
dc.rightsrestrictedAccess
dc.titleControl of near-field radiative heat transfer via surface phonon-polariton coupling in thin filmsen_US
dc.typeArticleen_US
dc.peerreviewedyesen_US
dc.publicationstatuspublisheden_US
dc.contributor.departmentÖzyeğin University
dc.contributor.authorID(ORCID 0000-0001-5483-587X & YÖK ID 141825) Mengüç, Pınar
dc.contributor.ozuauthorMengüç, Mustafa Pınar
dc.identifier.volume103
dc.identifier.issue3
dc.identifier.startpage547
dc.identifier.endpage550
dc.identifier.wosWOS:000291161700007
dc.identifier.doi10.1007/s00339-010-6184-0
dc.subject.keywordsNear-field radiative heat transferen_US
dc.identifier.scopusSCOPUS:2-s2.0-79959328776
dc.contributor.authorMale1


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